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GaN Single Crystalline Substrates by Ammonothermal and HVPE …
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WebMay 29, 2024 · Eta Research of Shanghai, China, which was founded in 2015 to develop free-standing gallium nitride (GaN) wafers, says that it is now able to produce 100mm GaN wafers. Eta uses HVPE to produce GaN wafers. A key process technology is the method of GaN separation from the substrate. WebAug 19, 2024 · The HVPE technology demonstrates two great advantages: (i) a relatively high growth rate, which exceeds 100 μm/h and (ii) a possibility to crystallize high-purity material; concentrations of unintentional dopants (silicon, oxygen, iron) are generally of the order of 10 16 cm −3 or even lower. WebEta Research Ltd. is a high-tech company set up in April 2015. Eta focuses on growing large size high-quality GaN wafers which can be produced for an affordable price for … tobins bloomington il